FD309 Russian PHOTODIODE ФД-309 Фотодиод

Russian photodiode FD-309

New

- single-element silicon p-i-n-photodiode

- round responsive element

- high responsivity

- hermetically sealed construction

- metal-to-glass package with a flat detector window

- ruggedized

MAIN CHARACTERISTICS

Diameter of the responsive element, mm - 10.5

Area of the responsive element, mm² - 86.5

Element number, pcs - 1

Back-biased mode of photovoltaic detector operation

Dark current of the PD responsive element (Ubias = 29V, T=20°C), µA, not 1,0

Dark currentof the PD guard ring (Ubias = 29V, T=20°C), µA not over 30,0

Spectral sensitivity range in 10 %

level of the maximum, µA 0.4 - 1.1

Current monochromatic pulse responsivity of the PD responsive element

(Ubias = 2V, λ = 0,9 µm), A/W, not less than 0.5

Spacing response non-uniformity

(Ubias = 27V, λ = 0,9 µm), %, not over 5.0

Rise time (Ubias = 27V, λ = 0,9 µm, R=100 Ohm), ns, not over 50.0

PD capacity (Ubias=27V) pF, not over 100.0

OPERATING CONDITIONS

Operating temperature range, °C from minus 60 up to 85

Relative air humidity, %, at temperature, °C, up to 98 at 25

RELIABILITY CHARACTERISTICS

Failure rate, h-1, not over5-10-6 within 5000 h

operating age at confdence coefficient of 0,6

98 % PD storage keeping period - not less than 12 years.

FIELD OF APPLICATION

Light radiation sensors in the range of 0.4 - 1.1 µm in guidance systems, scientific research.

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